sot23 npn silicon planar medium power transistor issue 3 - november 1995 j complementary type ? fmmt593 partmarking detail ? 493 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a base current i b 200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo 120 v i c =100 m a v ceo(sus) 100 v i c =10ma* v (br)ebo 5v i e =100 m a collector cut-off current i cbo 100 na v cb =100v collector cut-off current i ces 100 na v ces =100v emitter cut-off current i ebo 100 na v eb =4v saturation voltages v ce(sat) 0.3 0.6 v v i c =500ma, i b =50ma i c =1a, i b =100ma v be(sat) 1.15 v i c =1a, i b =100ma base-emitter turn on voltage v be(on) 1.0 v i c =1a, v ce =10v static forward current transfer ratio h fe 100 100 60 20 300 i c =1ma, v ce =10v* i c =250ma, v ce =10v* i c =500ma, v ce =10v* i c =1a, v ce =10v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT493 c b e sot23 FMMT493 3 - 120 3 - 119 v c e ( s a t ) -(v) 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c v b e ( s a t ) - (v) 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a h f e - typical gain 40 0 120 80 160 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a v b e ( o n ) - (v) 0.6 0.8 1.0 0.4 0.2 0 i c -collector current v ce(sat) v i c v c e ( s a t ) -(v) 1ma 0 0.1 100ma 10ma +25 c 0.2 0.3 0.4 i c /i b =10 10a 1a 0.4 +100 c -55 c +25 c +100 c -55 c +25 c -55 c +25 c +100 c i c /i b =10 v ce =10v v ce =10v i c -collector current (a) 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0 0.1 0.3 0.2 1ma 0.01 i c /i b =50 200 240 280 0.001 typical characteristics
sot23 npn silicon planar medium power transistor issue 3 - november 1995 j complementary type ? fmmt593 partmarking detail ? 493 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a base current i b 200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo 120 v i c =100 m a v ceo(sus) 100 v i c =10ma* v (br)ebo 5v i e =100 m a collector cut-off current i cbo 100 na v cb =100v collector cut-off current i ces 100 na v ces =100v emitter cut-off current i ebo 100 na v eb =4v saturation voltages v ce(sat) 0.3 0.6 v v i c =500ma, i b =50ma i c =1a, i b =100ma v be(sat) 1.15 v i c =1a, i b =100ma base-emitter turn on voltage v be(on) 1.0 v i c =1a, v ce =10v static forward current transfer ratio h fe 100 100 60 20 300 i c =1ma, v ce =10v* i c =250ma, v ce =10v* i c =500ma, v ce =10v* i c =1a, v ce =10v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT493 c b e sot23 FMMT493 3 - 120 3 - 119 v c e ( s a t ) -(v) 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c v b e ( s a t ) - (v) 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a h f e - typical gain 40 0 120 80 160 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a v b e ( o n ) - (v) 0.6 0.8 1.0 0.4 0.2 0 i c -collector current v ce(sat) v i c v c e ( s a t ) -(v) 1ma 0 0.1 100ma 10ma +25 c 0.2 0.3 0.4 i c /i b =10 10a 1a 0.4 +100 c -55 c +25 c +100 c -55 c +25 c -55 c +25 c +100 c i c /i b =10 v ce =10v v ce =10v i c -collector current (a) 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0 0.1 0.3 0.2 1ma 0.01 i c /i b =50 200 240 280 0.001 typical characteristics
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